FZ06NIA045FH01 target datasheet flow npc 0 600v/75a & 45m ? neutral-point-clamped inverter ultra fast switching clip-in pcb mounting low inductance layout solar inverters FZ06NIA045FH01 tj=25c, unless otherwise specified parameter symbol value unit polarity switch igbt t h =80c 65 t c =80c t h =80c 225 t c =80c t h =80c 105 t c =80c t sc t j 150c 6 s v cc v ge =15v 360 v polarity switch inverse diode t h =80c 30 t c =80c t h =80c 60 t c =80c t h =80c 46 t c =80c w power dissipation per diode p tot dc forward current a t j =t j max t p limited by t j max a i f t j =t j max t j =25c t j =t j max t j =t j max t p limited by t j max v rrm maximum junction temperature power dissipation per igbt v ge t j max p tot short circuit ratings peak repetitive reverse voltage gate-emitter peak voltage a v c v types maximum ratings condition features flow0 housing target applications schematic i frm t j max repetitive peak forward current 175 v 600 collector-emitter break down voltage repetitive peak collector current dc collector current v ce i cpulse i c 600 20 w a 175 maximum junction temperature c copyright by vincotech 1 revision: 3
FZ06NIA045FH01 target datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition buck mosfet t h =80c 30 t c =80c t h =80c 230 t c =80c t h =80c 92 t c =80c buck diode t h =80c t c =80c 20 t h =80c t c =80c 64 t h =80c t c =80c 41 thermal properties insulation properties v is t=2s 4000 v dc min 12,7 mm min 12,7 mm clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+tjmax - 25 c storage temperature t stg -40?+125 c power dissipation drain to source breakdown voltage dc drain current i d pulsed drain current i dpulse p tot dc forward current gate-source peak voltage vgs maximum junction temperature t j max t p limited by t j max t j =25c t j =t j max t j =t j max v ds c a v a w a v c v 150 20 t p limited by t j max w 600 t j =t j max a t j =t j max repetitive peak forward current maximum junction temperature v rrm i frm t j max power dissipation per diode i f peak repetitive reverse voltage p tot 600 175 copyright by vincotech 2 revision: 3
FZ06NIA045FH01 target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 4 5,8 7 tj=150c tj=25c 1,5 2,55 tj=150c 1,67 tj=25c 0,5 tj=150c tj=25c 650 tj=150c tj=25c tj=125c tbd tj=25c tj=125c tbd tj=25c tj=125c tbd tj=25c tj=125c tbd tj=25c tj=125c n.a. tj=25c tj=125c n.a. thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 0,90 k/w tj=25c 1,6 2,2 tj=150c tj=25c tj=150c tbd tj=25c tj=150c tbd tj=25c tj=150c tbd di(rec)max tj=25c /dt tj=150c tbd tj=25c tj=150c tbd thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,1 k/w nc na v nc mws ns ma v ? v pf 230 192 125 2360 none tj=25c turn-off energy loss per pulse 75 0,0012 300 0 0 600 vce=vge collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current i ces collector-emitter saturation voltage 15 f=1mhz vcc=960 v ns mws a conditions characteristic values value turn-on energy loss per pulse integrated gate resistor polarity switch igbt gate emitter threshold voltage c rss t f e on v ce(sat) t r input capacitance output capacitance 0 0 40 reverse transfer capacitance c oss 25 diode forward voltage gate charge polarity switch inverse diode v f q gate c ies 0 20 15 tj=25c 15 30 15 reverse recovery time i rrm reverse recovered energy erec peak rate of fall of recovery current reverse recovered charge peak reverse recovery current q rr t rr lf switching only v ge(th) t d(on) t d(off) e off r gint i ges lf switching only 300 a/ s copyright by vincotech 3 revision: 3
FZ06NIA045FH01 target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max conditions characteristic values value tj=25c 0,04 0,045 tj=125c tj=25c 2,1 3 3,9 tj=125c tj=25c 100 tj=125c tj=25c 31 tj=125c 30 tj=25c 6 tj=125c 6 tj=25c 158 tj=125c 170 tj=25c 45 tj=125c 12 tj=25c 0,132 tj=125c 0,229 tj=25c 0,026 tj=125c 0,026 25c 2,2 2,6 150c 1,7 25c 150c 60 25c 150c 20 25c 150c 650 di(rec)max 25c /dt 150c 13000 25c 150c 0,2 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2k / w r 25 tol. 13% tj=25c 19,1 22 24,9 k ? r 100 tol. 5% tj=100c 1411 1486 1560 ? k/w mws tj=25c tj=25c nc a v 150 51 6800 320 34 30 15 tj=25c 10 rgon=4 ? thermistor 30 input capacitance gate to drain charge output capacitance total gate charge gate to source charge reverse transfer capacitance thermal resistance chip to heatsink per chip buck diode static drain to source on resistance turn-off energy loss per pulse turn-on energy loss per pulse buck mosfet rise time fall time turn off delay time gate threshold voltage turn on delay time diode forward voltage rated resistance b-value b (25/100) tol. 3% k power dissipation given epcos-typ p mw mws tbd gate to source leakage current peak reverse recovery current i rrm reverse recovery energy q rr t rr reverse recovered charge v f rg=4 ? 0,75 pf ns ? 20 0 vgs=vds thermal grease thickness 50um = 1 w/mk 400 t d(on) r ds(on) 0,003 e rec peak rate of fall of recovery current t f r thjh reverse recovery time e off c oss 10 c rss v (gs)th i gss t r e on q gs q gd q g t d(off) 20 10 tj=25c 100 10 0 44 400 400 f=1mhz c iss 210 4000 a/ s ns na nc v copyright by vincotech 4 revision: 3
FZ06NIA045FH01 target datasheet version ordering code in datamatrix as in packaging barcode as standard in flow0 12mm housing 10-FZ06NIA045FH01-p925f10 p925f10 p925f10 outline pinout ordering code & marking ordering code and marking - outline - pinout copyright by vincotech 5 revision: 3
FZ06NIA045FH01 target datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. target product status datasheet status definition this datasheet contains the design specifications for product development. specificat ions may change in any manner without notice. the data contained is exclusively intended for technically trained staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the applic ation or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) su pport or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by vincotech 6 revision: 3
|
